Substrate Bias Amplification of a SiC Junction Field Effect...

Materials Science Forum 2004 Vol. 457-460

Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode

Nakagomi, Shinji, Takahashi, M., Kokubun, Y., Unéus, Lars, Savage, Susan, Wingbrant, H., Andersson, M., Lundström, Ingemar, Löfdahl, M., Lloyd Spetz, Anita
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Volume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.1507
File:
PDF, 524 KB
english, 2004
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