Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique
Lysenko, V.S., Osiyuk, I.P., Rudenko, T.E., Tyagulski, I.P., Sveinbjörnsson, Einar Ö., Ólafsson, H.Ö.Volume:
353-356
Year:
2001
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.353-356.479
File:
PDF, 338 KB
2001