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4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
Vassilevski, Konstantin, Nikitina, Irina P., Horsfall, Alton B., Wright, Nicolas G., Johnson, C. MarkVolume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.897
Date:
April, 2010
File:
PDF, 681 KB
english, 2010