HF-(NH 4 ) 2...

ACS Applied Materials & Interfaces 2015 / 04 Vol. 7; Iss. 16

HF-(NH 4 ) 2 S 2 O 8 -HCl Mixtures for HNO 3 - and NO x -free Etching of Diamond Wire- and SiC-Slurry-Sawn Silicon Wafers: Reactivity Studies, Surface Chemistry, and Unexpected Pyramidal Surface Morphologies

Stapf, André, Gondek, Christoph, Lippold, Marcus, Kroke, Edwin
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Volume:
7
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.5b01059
Date:
April, 2015
File:
PDF, 8.53 MB
english, 2015
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