Improving Switching Characteristics of 4H-SiC Junction...

Materials Science Forum 2006 Vol. 527-529

Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

Losee, P.A., Li, Can Hua, Kumar, R.J., Chow, T.P., Bhat, I., Gutmann, Ronald J., Stahlbush, Robert E.
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1363
File:
PDF, 397 KB
english, 2006
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