Oxygen Precipitation in Silicon: Correlation of the...

Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography

Hild, Erzsébet, Seres, J., Pal, E.K., Nouredin, S., Kormàny, T.
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Volume:
6-7
Year:
1989
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.6-7.119
File:
PDF, 496 KB
english, 1989
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