Poly-Si Thin-Film Transistors Robust Against Hot-Carrier...

Solid State Phenomena 2003 Vol. 93

Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process

Shiba, Takeo, Hatano, Mutsuko, Matsumura, Mieko, Toyota, Yoshiaki, Tai, Yoshiharu, Ohkura, Makoto, Miyazawa, Toshio, Itoga, Toshihiko
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Volume:
93
Year:
2003
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.93.19
File:
PDF, 594 KB
english, 2003
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