Electrical Switching Characteristics of Nitrogen Doped Ge2Sb2Te5 Based Phase Change Random Access Memory Cell
Kim, Myoung Sub, Jun, Jin Hyung, Oh, Jin Ho, Kim, Hyeong Joon, Roh, Jae Sung, Hong, Suk Kyoung, Choi, Doo JinVolume:
124-126
Year:
2007
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.124-126.21
File:
PDF, 1.49 MB
english, 2007