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Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors
Kuroda, Rihito, Nakao, Yukihisa, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, TadahiroVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.04ec04
Date:
January, 2014
File:
PDF, 1.74 MB
english, 2014