Polishing Characteristics of 4H-SiC Si-Face and C-Face by...

Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining

Sano, Yasuhisa, Watanabe, Masayo, Yamamura, Kazuya, Yamauchi, Kazuto, Ishida, Takeshi, Arima, Kenta, Kubota, Akihisa, Mori, Yuzo
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Volume:
556-557
Year:
2007
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.556-557.757
File:
PDF, 791 KB
english, 2007
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