Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Pierobon, R., Meneghesso, G., Zanoni, E., Roccaforte, Fabrizio, La Via, Francesco, Raineri, VitoVolume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.933
File:
PDF, 223 KB
english, 2005