Temperature Stability of Breakdown Voltage on SiC Power...

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Pierobon, R., Meneghesso, G., Zanoni, E., Roccaforte, Fabrizio, La Via, Francesco, Raineri, Vito
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.933
File:
PDF, 223 KB
english, 2005
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