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Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio Trapping
Park, J.-S., Curtin, M., Hydrick, J. M., Bai, J., Carroll, M., Fiorenza, J. G., Lochtefeld, A.Volume:
156
Year:
2009
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3076192
File:
PDF, 961 KB
english, 2009