Nanostructuring of Mo/Si multilayers by means of reactive...

Thin Solid Films 2004 Vol. 458; Iss. 1-2

Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask

L. Dreeskornfeld, G. Haindl, U. Kleineberg, U. Heinzmann, F. Shi, B. Volland, I.W. Rangelow, E. Majkova, S. Luby, Kostic, L. Matay, P. Hrkut, P. Hudek, Hsin-Yi Lee
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Volume:
458
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2003.09.070
File:
PDF, 962 KB
english, 2004
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