Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
F.L Martı́nez, R Ruiz-Merino, A del Prado, E San Andrés, I Mártil, G González-Dı́az, C Jeynes, N.P Barradas, L Wang, H.S ReehalVolume:
459
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2003.12.084
File:
PDF, 135 KB
english, 2004