Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by...

Thin Solid Films 2004 Vol. 466; Iss. 1-2

Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov
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Volume:
466
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2004.02.010
File:
PDF, 573 KB
english, 2004
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