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Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors
Bartolomeo, Antonio Di, Giubileo, Filippo, Santandrea, Salvatore, Romeo, Francesco, Citro, Roberta, Schroeder, Thomas, Lupina, GrzegorzVolume:
22
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/22/27/275702
Date:
July, 2011
File:
PDF, 907 KB
english, 2011