Characterization of the interface and the bulk phenomena in...

Characterization of the interface and the bulk phenomena in metal–SiO2–(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures

S. Kochowski, K. Nitsch, B. Paszkiewicz, R. Paszkiewicz
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Volume:
467
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2004.04.008
File:
PDF, 226 KB
english, 2004
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