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Characterization of the interface and the bulk phenomena in metal–SiO2–(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures
S. Kochowski, K. Nitsch, B. Paszkiewicz, R. PaszkiewiczVolume:
467
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2004.04.008
File:
PDF, 226 KB
english, 2004