Dislocation Substructures and Plasticity of GaAs below...

Materials Science Forum 1986 Vol. 10-12

Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping

Boivin, Philippe, Rabier, J., Garem, H.
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Volume:
10-12
Year:
1986
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.10-12.781
File:
PDF, 403 KB
1986
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