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Sputtered full-wafer backside metallization for n-type InP: effect of temperature annealing
St.J. Dixon-Warren, S. Zhang, R. Kuchibhatla, E.M. Griswold, A. Shen, F. Zheng, S.R. DasVolume:
472
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.tsf.2004.06.112
File:
PDF, 649 KB
english, 2005