4H-SiC pn Diode Grown by LPE Method for High-Power...

Materials Science Forum 2003 Vol. 433-436

4H-SiC pn Diode Grown by LPE Method for High-Power Applications

Kuznetsov, N.I., Bauman, D., Gavrilin, A., Kassamakova, Liliana, Kakanakov, Roumen, Sarov, G., Cholakova, T., Zekentes, K., Dimitrov, Ventzislav I.
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Volume:
433-436
Year:
2003
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.433-436.867
File:
PDF, 174 KB
english, 2003
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