Wafer bonding for high-brightness light-emitting diodes via...

Thin Solid Films 2005 Vol. 478; Iss. 1-2

Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

Po-Chun Liu, Chin-Yuan Hou, YewChung-Sermon Wu
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Volume:
478
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2004.11.070
File:
PDF, 618 KB
english, 2005
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