Development of Epitaxial SiC Processes Suitable for Bipolar...

Materials Science Forum 2005 Vol. 483-485

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, Joseph J., Das, Mrinal K., Ha, Seo Young, Hurt, Edward, Irvine, Kenneth G., Paisley, Michael J., O'Loughlin, Michael J., Palmour, John W., Skowronski, Marek, McD. Hobgood, H., Carter Jr., C
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.155
File:
PDF, 386 KB
english, 2005
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