The Influence of Isovalent Doping on Diffusion of...

Materials Science Forum 1997 Vol. 258-263

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

Khirunenko, L.I., Pomozov, Yu.V., Shakhovtsov, V.I., Shumov, V.V.
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Volume:
258-263
Year:
1997
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.258-263.1773
File:
PDF, 246 KB
1997
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