High Frequency Inversion Capacitance Measurements for...

Materials Science Forum 2009 Vol. 600-603

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C

Ghosh, Ruby N., Loloee, Reza, Isaacs-Smith, Tamara, Williams, John R.
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Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.739
File:
PDF, 282 KB
english, 2009
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