Excimer Laser annealing for shallow junction formation in Si power MOS devices
G. Fortunato, V. Privitera, A. La Magna, L. Mariucci, M. Cuscunà, B.G. Svensson, E. Monakhov, M. Camalleri, A. Magrì, D. Salinas, F. SimonVolume:
504
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2005.09.017
File:
PDF, 289 KB
english, 2006