Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs
Jiang, Huaping, Chen, Wanjun, Liu, Chuang, Rao, Zugang, Dong, Bin, Zhang, BoVolume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/12/124004
Date:
December, 2011
File:
PDF, 503 KB
english, 2011