Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films
I. Blaszczyk-Lezak, A.M. Wrobel, T. Aoki, Y. Nakanishi, I. Kucinska, A. TraczVolume:
497
Year:
2006
Language:
english
Pages:
11
DOI:
10.1016/j.tsf.2005.09.192
File:
PDF, 342 KB
english, 2006