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Homoepitaxial silicon growth in a non-ultra-high vacuum environment by ion-assisted deposition on Si wafer and seeded glass substrates
Axel Straub, Daniel Inns, Mason L. Terry, Yidan Huang, Per I. Widenborg, Armin G. AberleVolume:
511-512
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2005.12.004
File:
PDF, 177 KB
english, 2006