Effect of growth temperature on the luminescent and...

Thin Solid Films 2006 Vol. 515; Iss. 2

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

L. Borkovska, O. Yefanov, O. Gudymenko, S. Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu. Sadofyev, Y.-H. Zhang
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Volume:
515
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2005.12.194
File:
PDF, 138 KB
english, 2006
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