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Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
Jawad-ul Hassan, A. Henry, J.P. Bergman, E. JensénVolume:
515
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2005.12.262
File:
PDF, 160 KB
english, 2006