Formation of Si-terminated SiC films on annealing C60 on a...

Thin Solid Films 2006 Vol. 515; Iss. 4

Formation of Si-terminated SiC films on annealing C60 on a Si(001)-2 × 1 surface

C.-P. Cheng, J.-F. Wen, C.-P. Ouyang, J.-W. Huang, T.-W. Pi
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Volume:
515
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2006.07.029
File:
PDF, 271 KB
english, 2006
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