Silicon as a model ion trap: Time domain measurements of...

Proceedings of the National Academy of Sciences 2008 / 08 Vol. 105; Iss. 31

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

Vinh, N. Q., Greenland, P. T., Litvinenko, K., Redlich, B., van der Meer, A. F. G., Lynch, S. A., Warner, M., Stoneham, A. M., Aeppli, G., Paul, D. J., Pidgeon, C. R., Murdin, B. N.
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Volume:
105
Language:
english
Journal:
Proceedings of the National Academy of Sciences
DOI:
10.1073/pnas.0802721105
Date:
August, 2008
File:
PDF, 440 KB
english, 2008
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