Epitaxial growth and relaxation of γ-Al2O3 on silicon

Epitaxial growth and relaxation of γ-Al2O3 on silicon

C. Merckling, M. El-Kazzi, V. Favre-Nicolin, M. Gendry, Y. Robach, G. Grenet, G. Hollinger
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Volume:
515
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2006.11.157
File:
PDF, 1.01 MB
english, 2007
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