Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC...

Materials Science Forum 2006 Vol. 527-529

Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Cheng, Lin, Casady, Janna R.B., Mazzola, Michael S., Bondarenko, V., Kelley, Robin L., Sankin, Igor, Merrett, J. Neil, Casady, Jeff B.
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1183
File:
PDF, 537 KB
english, 2006
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