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Effect of filament and substrate temperatures on the structural and electrical properties of SiC thin films grown by the HWCVD technique
A. Dasgupta, Y. Huang, L. Houben, S. Klein, F. Finger, R. Carius, M. LuysbergVolume:
516
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2007.06.077
File:
PDF, 1.02 MB
english, 2008