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Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition
A.P. Grzegorczyk, J.L. Weyher, P.R. Hageman, P.K. LarsenVolume:
516
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2007.08.125
File:
PDF, 722 KB
english, 2008