Properties of Ge Films Grown Through Inductively Coupled...

Journal of The Electrochemical Society 2008 Vol. 155; Iss. 6

Properties of Ge Films Grown Through Inductively Coupled Plasma Chemical Vapor Deposition on SiO[sub 2] Substrates

Yang, Ming-Jui, Chien, Chao-Hsin, Shen, Chih-Yen, Huang, Tiao-Yuan
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Volume:
155
Year:
2008
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2901885
File:
PDF, 1.00 MB
english, 2008
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