Evidences of the defect pool model in the dark current-voltage characteristics of hydrogenated amorphous silicon based p-i-n devices
A. Sturiale, F.A. RubinelliVolume:
516
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2008.04.002
File:
PDF, 626 KB
english, 2008