Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2...

Thin Solid Films 2008 Vol. 516; Iss. 21

Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

Cheng Xu, Bo Liu, Zhitang Song, Songlin Feng, Bomy Chen
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Volume:
516
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2008.05.039
File:
PDF, 471 KB
english, 2008
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