Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process
Seiichiro Ii, Yuichi Takaki, Ken-ichi Ikeda, Hideharu Nakashima, Hiroshi NakashimaVolume:
517
Year:
2008
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2008.08.011
File:
PDF, 187 KB
english, 2008