Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process
Norio Hirashita, Shu Nakaharai, Yoshihiko Moriyama, Koji Usuda, Tsutomu Tezuka, Naoharu Sugiyama, Shin-ichi TakagiVolume:
517
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2008.08.053
File:
PDF, 893 KB
english, 2008