Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
V. Terzieva, L. Souriau, M. Caymax, D.P. Brunco, A. Moussa, S. Van Elshocht, R. Loo, F. Clemente, A. Satta, Marc MeurisVolume:
517
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2008.08.144
File:
PDF, 589 KB
english, 2008