High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with...

Materials Science Forum 2009 Vol. 600-603

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl

Zhang, Jie, Mazzola, Janice, Sunkari, Swapna G., Stewart, Gray, Klein, P.B., Ward, Rachael M., Glaser, E.R., Lew, Kok Keong, Gaskill, D. Kurt, Sankin, Igor, Bondarenko, Vlad, Null, David, Sheridan, Da
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Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.103
File:
PDF, 6.02 MB
english, 2009
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