[IEEE 2014 9th International Design & Test Symposium (IDT) - Algeries, Algeria (2014.12.16-2014.12.18)] 2014 9th International Design and Test Symposium (IDT) - Analytical approach of the impact of through silicon via on the performance of MOS devices
Amine, Benkechkache Mohamed El, Saida, Latreche, Betta, Gian-Franco DallaYear:
2014
Language:
english
DOI:
10.1109/IDT.2014.7038621
File:
PDF, 417 KB
english, 2014