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ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. GrundmannVolume:
518
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2009.02.149
File:
PDF, 630 KB
english, 2009