Characterization of Deep Levels in SiC by Photoluminescence...

Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping

Tajima, Michio, Kumagaya, Y., Nakata, Toshitake, Inoue, M., Nakamura, A.
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Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.481
File:
PDF, 373 KB
1998
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