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Poly(3-hexylthiophene) based field-effect transistors with gate SiO2 dielectric modified by multi-layers of 3-aminopropyltrimethoxysilane
Vibha Saxena, A.K. Chauhan, N. Padma, D.K. Aswal, S.P. Koiry, Shashwati Sen, R.B. Tokas, S.K. Gupta, C. Sürgers, J.V. YakhmiVolume:
517
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2009.05.031
File:
PDF, 409 KB
english, 2009