Behavior of strain at a thin Ge pile-up layer formed by dry...

Thin Solid Films 2010 Vol. 518; Iss. 8

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

B.-G. Min, J.-H. Yoo, H.-C. Sohn, D.-H. Ko, M.-H. Cho, K.-B. Chung, T.-W. Lee
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Volume:
518
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2009.07.145
File:
PDF, 957 KB
english, 2010
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