Role of Oxygen on Donor Formation in CZ-Silicon During...

Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment

Prakash, O., Singh, Sohan
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Volume:
55
Year:
1997
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.55.123
File:
PDF, 473 KB
1997
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