![](/img/cover-not-exists.png)
Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment
Prakash, O., Singh, SohanVolume:
55
Year:
1997
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.55.123
File:
PDF, 473 KB
1997