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Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy method
Y.H. Kim, Y.K. Noh, M.D. Kim, J.E. Oh, K.S. ChungVolume:
518
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2009.09.120
File:
PDF, 1.15 MB
english, 2010